Publikace detail

Optically-Induced diffusion and dissolution of Ag into thin films of (GeS2)0,8(Ga2S3)0,2

Rok: 2011

Druh publikace: článek v odborném periodiku

Název zdroje: Journal of Optoelectronics and Advanced Materials

Název nakladatele: National Institute of Optoelectronics

Místo vydání: Bukurešť

Strana od-do: 1553-1558

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
cze	Opticky indukovaná difuze a rozklad Ag do tenkých filmů (GeS2)0,8(Ga2S3)0,2	Chalkogenidová skla obsahující Ag jsou vnímána jako slibné alternativní materiály pro mnoho aplikací, taková jako optické částice, paměti, bio- a chemické sensory, elektrolyty a baterie.	Ag; GeS(2) - Ga(2)S(3) filmy;opticky indukovaná difuze
eng	Optically-Induced diffusion and dissolution of Ag into thin films of (GeS2)0,8(Ga2S3)0,2	Chalcogenide glasses containing Ag are seen as promising alternative materials for many applications, such as optical elements, memories, bio- and chemical-sensors, solid electrolytes and batteries. Thin films were prepared from bulk sample with composition (GeS(2))(0,8)(Ga(2)S(3))(0,2), which was obtained by direct synthesis from pure elements. Two methods were used for thin films preparation - thermal evaporation with two different boxes and pulsed laser deposition (PLD). Thin films were characterized by XRD, EDX, UV/VIS spectroscopy and VASE. Thin films prepared by PLD were suitable thanks to good agreement of composition with bulk sample and good optical homogeneity for photoinduced diffusion and dissolution (OIDD) of silver. After OIDD process the thin films containing Ag were characterized by XRD, EDX, UV/VIS spectroscopy and VASE	Ag;GeS(2) - Ga(2)S(3) films;Optically induced diffusion

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