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Publikace detail

Optical properties of GaGeTe single crystal.
Rok: 2012
Druh publikace: ostatní - přednáška nebo poster
Strana od-do: nestránkováno
Tituly:
Jazyk Název Abstrakt Klíčová slova
eng Optical properties of GaGeTe single crystal. GaGeTe single crystals were grown using modified Bridgman method. A selected sample was characterized by X-ray diffraction and investigated by measurements of the reflectance in the plasma-resonance-frequency region and by measurements of the transmittance spectra. Two distinct transmittance maxima were found in the GaGeTe transmittance spectra near 0.5 and 1.0 eV. Accordingly, variation of the square root of absorption coefficient as a function of incident radiation energy showed two distinct minima of , located at 0.5 and 1.0 eV. While the former minimum can be attributed to intraband transitions the later can be attributed to intrinsic interband transition – fundamental edge. The activation energy estimate to =1000 cm-1 gives (h)1 0.5 eV and Eg=(h)2 1 eV, respectively. Free carrier scattering mechanism was estimated from the slope of long-wavelength edge. GaGeTe; optical properties reflectance