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Chalcogenide glasses of Ge-Ga-Sb-S system doped with Er3+, Ho3+ and Nd3+/Tm3+

Autoři: Střižík Lukáš | Wágner Tomáš | Heo J. | Liu C. | Frumar Miloslav

Rok: 2012

Druh publikace: ostatní do riv

Strana od-do: nestránkováno

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
cze	Chalcogenide glasses of Ge-Ga-Sb-S system doped with Er3+, Ho3+ and Nd3+/Tm3+	Chalcogenide glasses of Ge-Ga-Sb-S are suitable materials as a host matrix for doping with rare earth elements [1]. The applications of such materials can be found in telecommunication, laser devices, photon converters etc. [2-4]. Prepared Ge-Ga-Sb-S glasses were doped with Er3+, Ho3+ and co-doped with Nd3+/Tm3+ ions. The amorphous state of prepared samples was studied by X-ray diffraction (XRD) analysis. Composition was determined by energy dispersive X-ray (EDX) spectroscopy. The glass transition as well as crystallization temperature were studied via differential scanning calorimetry (DSC). Spectral dependence of refractive index and optical band gap energy were calculated from data of variable angle spectroscopic ellipsometry (VASE). Photoluminescence (PL) spectroscopy was used for study of 4f-4f electronic transitions of rare earth elements. In cases of glasses doped with Er3+ were observed 4I13/2→4I15/2 (1540 nm), 4I11/2→4I15/2 (990 nm) transitions and up-conversion of 4F9/2→4I15/2 (660 nm), 4S3/2→4I15/2 (540 nm) transitions. In the case of Ho3+-doped glasses was evident 5I6→5I8 (1180 nm) transition. The transitions of 4F3/2→4I13/2 (1330 nm), 4F3/2→4I11/2 (1060 nm) and 4F3/2→4I9/2 (890 nm) belong to Nd3+ ions, while the transitions of 3H4→3F4 (1450 nm) and 3H5→3H6 (1220 nm) belong to Tm3+ ions in the case of Nd3+/Tm3+-co-doped glasses. The results are discussed. Acknowledgement The authors would like to thank the MSMT, LH KONTAKT II, project LH11101 and to ESF and MSMT for financial support from CZ.1.07/2.3.00/20.0254 project “ReAdMat-Research team for advanced non-crystalline materials”.	Chalkogenidová skla; Ge-Ga-Sb-S systém;
eng	Chalcogenide glasses of Ge-Ga-Sb-S system doped with Er3+, Ho3+ and Nd3+/Tm3+	Chalcogenide glasses of Ge-Ga-Sb-S are suitable materials as a host matrix for doping with rare earth elements [1]. The applications of such materials can be found in telecommunication, laser devices, photon converters etc. [2-4]. Prepared Ge-Ga-Sb-S glasses were doped with Er3+, Ho3+ and co-doped with Nd3+/Tm3+ ions. The amorphous state of prepared samples was studied by X-ray diffraction (XRD) analysis. Composition was determined by energy dispersive X-ray (EDX) spectroscopy. The glass transition as well as crystallization temperature were studied via differential scanning calorimetry (DSC). Spectral dependence of refractive index and optical band gap energy were calculated from data of variable angle spectroscopic ellipsometry (VASE). Photoluminescence (PL) spectroscopy was used for study of 4f-4f electronic transitions of rare earth elements. In cases of glasses doped with Er3+ were observed 4I13/2→4I15/2 (1540 nm), 4I11/2→4I15/2 (990 nm) transitions and up-conversion of 4F9/2→4I15/2 (660 nm), 4S3/2→4I15/2 (540 nm) transitions. In the case of Ho3+-doped glasses was evident 5I6→5I8 (1180 nm) transition. The transitions of 4F3/2→4I13/2 (1330 nm), 4F3/2→4I11/2 (1060 nm) and 4F3/2→4I9/2 (890 nm) belong to Nd3+ ions, while the transitions of 3H4→3F4 (1450 nm) and 3H5→3H6 (1220 nm) belong to Tm3+ ions in the case of Nd3+/Tm3+-co-doped glasses. The results are discussed. Acknowledgement The authors would like to thank the MSMT, LH KONTAKT II, project LH11101 and to ESF and MSMT for financial support from CZ.1.07/2.3.00/20.0254 project “ReAdMat-Research team for advanced non-crystalline materials”.	Chalcogenide glasses; Ge-Ga-Sb-S system;