Univerzita PardubiceFakulta chemicko- technologická

Univerzita Pardubice

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Publikace detail

Preparation and optical properties of thin films of the system Ge28-xGaxS72

Autoři: Valkova Silvie | Wágner Tomáš | Bartoš Miroslav | Přikryl Jan | Vlček Milan | Frumarová Božena | Beneš Ludvík | Frumar Miloslav

Rok: 2012

Druh publikace: ostatní do riv

Strana od-do: nestránkováno

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
cze	Preparation and optical properties of thin films of the system Ge28-xGaxS72	Because of the specific properties of chalcogenide glasses, they can be used as potential materials in many devices in electronics and optoelectronics. Therefore it is main issue of research at many academic groups [1]. Bulk samples with compositions Ge28S72, Ge26Ga2S72, Ge24Ga4S72 and Ge22Ga6S72 were prepared by direct synthesis from elements with high purity. The thin films of these glasses were prepared by two different methods. By thermal vacuum evaporation (VE) with three different chambers the three types of thin films were obtained. The forth type of films was prepared by pulsed lased deposition (PLD). The samples of thin films were characterized by X-Ray diffraction analysis (XRD), Energy Dispersive X-Ray analysis (EDX), Raman spectroscopy, UV/VIS spectroscopy and Variable Angle Spectral Ellipsometry (VASE). The different methods of preparation as well as the different chambers have a large influence to the properties of prepared thin films, such as thickness, refractive index or transmittance.	chalkogenidová skla; Ge-Ga-S; tenké filmy
eng	Preparation and optical properties of thin films of the system Ge28-xGaxS72	Because of the specific properties of chalcogenide glasses, they can be used as potential materials in many devices in electronics and optoelectronics. Therefore it is main issue of research at many academic groups [1]. Bulk samples with compositions Ge28S72, Ge26Ga2S72, Ge24Ga4S72 and Ge22Ga6S72 were prepared by direct synthesis from elements with high purity. The thin films of these glasses were prepared by two different methods. By thermal vacuum evaporation (VE) with three different chambers the three types of thin films were obtained. The forth type of films was prepared by pulsed lased deposition (PLD). The samples of thin films were characterized by X-Ray diffraction analysis (XRD), Energy Dispersive X-Ray analysis (EDX), Raman spectroscopy, UV/VIS spectroscopy and Variable Angle Spectral Ellipsometry (VASE). The different methods of preparation as well as the different chambers have a large influence to the properties of prepared thin films, such as thickness, refractive index or transmittance.	Chalcogenide glasses; Ge-Ga-S; thin films