Univerzita Pardubice Fakulta chemicko- technologická

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Publikace detail

The Investigation of doping elements solubility in Ga2Te3

Autoři: Kucek Vladimír | Drašar Čestmír | Lošťák Petr | Beneš Ludvík

Rok: 2010

Druh publikace: ostatní do riv

Strana od-do: nestránkováno

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
cze	The Investigation of doping elements solubility in Ga2Te3	Regarding very low thermal conductivity, Ga2Te3 seems to be promising thermoelectric material [1]. Band gap of Ga2Te3 is roughly 1.15 eV [2]. The paper also reports on a very low concentration of deep donor-like level (of the order of 1020 m-3) originating probably in native defects. As a result Ga2Te3 shows very low electrical conductivity. Upon optimizing of thermoelectric materials one need some doping elements to adjust thermoelectric parameters. A comprehensive doping study is missing in the literature. Three sets of samples were prepared from elements of 5N purity Ga2-xMxTe3, where M is aluminum (x = 0.05; 0.1; 0.2), germanium (x = 0.02; 0.05; 0.1; 0.2) and silicon (x = 0.02; 0.05; 0.1), and one set with overstechiometric content of germanium Ga2GexTe3, where x = 0.02; 0.05; 0.1 and 0.2. All samples (quenched in air) doped by Si and Al were single phase. From the set with germanium only the samples with x ≤ 0.05 were single phase, samples with higher concentrations of Ge contain phases GeTe or GaGeTe. Samples with overstoichiometric content of germanium were single phase for x ≤ 0.02. Samples with x = 0.05; 0.1 and 0.2 contained other phases (GeTe and GaGeTe).	termoelektrický materiál; Ga2Te3
eng	The Investigation of doping elements solubility in Ga2Te3	Regarding very low thermal conductivity, Ga2Te3 seems to be promising thermoelectric material [1]. Band gap of Ga2Te3 is roughly 1.15 eV [2]. The paper also reports on a very low concentration of deep donor-like level (of the order of 1020 m-3) originating probably in native defects. As a result Ga2Te3 shows very low electrical conductivity. Upon optimizing of thermoelectric materials one need some doping elements to adjust thermoelectric parameters. A comprehensive doping study is missing in the literature. Three sets of samples were prepared from elements of 5N purity Ga2-xMxTe3, where M is aluminum (x = 0.05; 0.1; 0.2), germanium (x = 0.02; 0.05; 0.1; 0.2) and silicon (x = 0.02; 0.05; 0.1), and one set with overstechiometric content of germanium Ga2GexTe3, where x = 0.02; 0.05; 0.1 and 0.2. All samples (quenched in air) doped by Si and Al were single phase. From the set with germanium only the samples with x ≤ 0.05 were single phase, samples with higher concentrations of Ge contain phases GeTe or GaGeTe. Samples with overstoichiometric content of germanium were single phase for x ≤ 0.02. Samples with x = 0.05; 0.1 and 0.2 contained other phases (GeTe and GaGeTe).	thermoelectric material; Ga2Te3