Univerzita PardubiceFakulta chemicko- technologická

Univerzita Pardubice

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Publikace detail

Ge-Sb-Te thin films doped with antimony for rewritable phase-change memories

Autoři: Střižík Lukáš | Gutwirth Jan | Wágner Tomáš | Přikryl Jan | Hrdlička Martin | Bezdička Petr | Vlček Milan | Frumar Miloslav

Rok: 2011

Druh publikace: ostatní do riv

Strana od-do: nestránkováno

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
cze	Ge-Sb-Te thin films doped with antimony for rewritable phase-change memories	The Ge-Sb-Te ternary chalcogenide system is a material for phase-change memories. However, the commercially available Ge2Sb2Te5 degrades during multiple rewriting cycles into Ge15Sb47Te38 [1]. Sb doped Ge2Sb2Te5 thin films were deposited by RF magnetron sputtering and were tested for their suitability as PRAMs using the van der Pauw method [2]. Amorphous and thermally treated thin films were characterized by the Scanning Electron Microscopy (surface morphology) coupled with the Energy Dispersive X-ray analysis (chemical composition and homogeneity) and by the X-ray diffraction analysis (crystallinity). The influence of Sb content, deposition conditions and thermal treatment on the composition, crystallinity and surface morphology of samples were established. A profile of temperature dependence of the sheet resistance and characteristic temperatures (e.g. the crystallization) were obtained and will be discussed.	Ge-Sb-Te; chalkogenidy; fázové změny paměti
eng	Ge-Sb-Te thin films doped with antimony for rewritable phase-change memories	The Ge-Sb-Te ternary chalcogenide system is a material for phase-change memories. However, the commercially available Ge2Sb2Te5 degrades during multiple rewriting cycles into Ge15Sb47Te38 [1]. Sb doped Ge2Sb2Te5 thin films were deposited by RF magnetron sputtering and were tested for their suitability as PRAMs using the van der Pauw method [2]. Amorphous and thermally treated thin films were characterized by the Scanning Electron Microscopy (surface morphology) coupled with the Energy Dispersive X-ray analysis (chemical composition and homogeneity) and by the X-ray diffraction analysis (crystallinity). The influence of Sb content, deposition conditions and thermal treatment on the composition, crystallinity and surface morphology of samples were established. A profile of temperature dependence of the sheet resistance and characteristic temperatures (e.g. the crystallization) were obtained and will be discussed.	Ge-Sb-Te; Chalcogenides; phase-change memories;