Univerzita PardubiceFakulta chemicko- technologická

Univerzita Pardubice

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Publikace detail

Photoluminescence and photon up-conversion in bulk and thin film rare-earth-doped amorphous chalcogenides

Autoři: Wágner Tomáš | Střižík Lukáš | Zhang Jihong | Oswald Jiří | Pavlišta Martin | Kohoutek Tomáš | Frumar Miloslav | Heo Jong

Rok: 2014

Druh publikace: ostatní - přednáška nebo poster

Strana od-do: nestránkováno

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
eng	Photoluminescence and photon up-conversion in bulk and thin film rare-earth-doped amorphous chalcogenides	Talk provides new results on photoluminescence and photon up conversion in rare earth doped (Er3+ and Er3+/Nd3+) Ga Ge Sb S amorphous chalcogenides in form of bulks as well as PLD films with emphasis on their properties and intended applications. We present on compositional tuning of Ge25Ga10 xSbxS65: 0.5 at.% Er3+ (x = 0.5 to 5.0 at.%) chalcogenide phosphors to find the trade off between stability and achievement of efficient photon up conversion emission starting at green visible spectral region at pumping wavelengths of 808, 980 and 1550 nm. The substitution of gallium with antimony leads to increase of thermal stability and glass forming ability which is accompanied by the reduction of glass transition temperature Tg allowing the fiber drawing. On the other hand, the addition of antimony causes a red shift of the absorption edge, which is in the case of sulfides at ≈ 500 nm and thus, it negatively affects the green photon up conversion emission. Observed up conversion emission bands originate from Er3+:2H11/2→4I15/2 (≈ 530 nm), Er3+:4S3/2→4I15/2 (≈ 550 nm), Er3+:4F9/2→4I15/2 (≈ 660 nm), Er3+:4I9/2→4I15/2 (≈ 810 nm) and Er3+:4I11/2→4I15/2 (≈ 990 nm) intra 4f electronic transitions. Moreover, these phosphors exhibit efficient Stokes emissions of Er3+:4I13/2→4I15/2 (≈ 1.5 μm) and Er3+:4I11/2→4I13/2 (≈ 2.7 μm) transitions. In addition, according to our best knowledge, first we achieved 2.7 μm mid infrared Er3+:4I11/2→4I13/2 emission under 1550 nm eye safe laser pumping, which (telecommunication C band) originates from anti Stokes processes. Above mentioned properties make these phosphors promising materials in wide range applications, such as lasers, optical waveguides, EDFA, sensors and detectors, LIDAR and up converter layers enhancing the silicon solar cell efficiency.	Photoluminescence; Photon up-conversion; chalcogenides; Er3+; Nd3+; Ga-Ge-Sb-S