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Publikace detail

Ga-Ge-Sb-S: Er3+(/Nd3+) amorphous chalcogenides
Autoři: Střižík Lukáš | Oswald Jiří | Wágner Tomáš
Rok: 2014
Druh publikace: ostatní - přednáška nebo poster
Strana od-do: nestránkováno
Tituly:
Jazyk Název Abstrakt Klíčová slova
eng Ga-Ge-Sb-S: Er3+(/Nd3+) amorphous chalcogenides Nowadays, photoluminescence and photon up conversion are widely studied and applicable phenomena such as in lasers, sensors and detectors, Erbium Doped Fibre Amplifiers (EDFA), LIght Detection And Ranging (LIDAR), RGB displays, Dense Wavelength Division Multiplexing (DWDM). Promising host materials for doping with Ln3+ ions are amorphous chalcogenides. The reason can be seen in their unique properties such as low phonon energy, high refractive index and broad transparency from visible to mid infrared spectral region. Present work deals with the Ga Ge Sb S:Er3+(/Nd3+) amorphous chalcogenides studied for photon up conversion emission from visible to near infrared spectral region and also for Stokes emission in the near and mid infrared spectral region. Judd Ofelt theory was used for the study of Er3+ local environment when the [GaS4]− tetrahedral units are replaced with [SbS3] pyramids. Accuracy of Judd Ofelt theory in the case of Er3+ doped chalcogenides is discussed. McCumber theory was used for the calculation of Er3+:4I13/2→4I15/2 emission cross section from absorption cross section spectra. Optical gain coefficient G(E) as a function of relative population of the Er3+: 4I13/2 and 4I15/2 manifolds was used for potential applicability of studied materials for EDFA. Intensity of some anti Stokes and Stokes emission bands of Nd3+ ions (≈ 0.9, 1.07, 1.36, 2.5 μm) can be further improved by co doping the glasses with Er3+ ions which leads to efficient Er3+ → Nd3+ energy transfer. The Ga Ge Sb S:Er3+/Nd3+ glasses show also broad band mid infrared emission (2.3–2.9 μm). Ga-Ge-Sb-S; Er3+; Nd3+; amorphous chalcogenides; luminescence; photon up-conversion