Publikace detail

Amorphous-to-crystalline transition in Ge8Sb(2-x)BixTe11 phase-change materials for data recording

Rok: 2016

Druh publikace: článek v odborném periodiku

Název zdroje: Journal of Alloys and Compounds

Název nakladatele: Elsevier Science SA

Místo vydání: Lausanne

Strana od-do: 63-72

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
cze	Fázová změna amorfizace-krystalizace v Ge8Sb(2-x)BixTe11 materiálu pro záznam dat	Krystalizační chování tenkého filmu Ge(8)Sb((2-x))Bi(x)Te(11) bylo studováno vzhledem k možnému využití daného materiálu jako PCM pro záznam informací. Byl sledován vliv změny složení na proces krystalizace-amortizace.	amorfní materiály; materiály pro ukládání dat; XRD; kalorimetrie
eng	Amorphous-to-crystalline transition in Ge8Sb(2-x)BixTe11 phase-change materials for data recording	Structural and thermokinetic analyses were used to study the crystallization behavior of Ge(8)Sb((2-x))Bi(x)Te(11)thin films, promising materials for phase-change memory recording applications. By exploring the full compositional range, it was found that the Sb -> Bi substitution leads to a decrease of crystallization enthalpy and activation energy of the main crystallization phase-change process. These trends were explained in terms of the changing structural ordering within the recently proposed new phase-change atomic switching mechanism. All of the compositions exhibited very similar transformation kinetics, confirming the uniformity of the phase-change mechanisms involved. It was further shown that rapid energy delivery achieved during heating, in the case of all investigated materials, leads to a transition from the classical nucleation/growth-based formation of 3D crystallites towards an autocatalytic phase-change process with an enormously increased speed of crystallization. Rapidity of the crystallization process was quantified for all of the studied compositions based on a novel Index of Crystallization Rapidity criterion - the results provided by this criterion showed that the highest crystallization speed was produced by the Ge8Sb0.8Bi1.2Te11 composition, which therefore from this point of view appears to be a suitable candidate for the new generation of phase-change memory recording devices.	Amorphous materials; Data storage materials; X-ray diffraction; Calorimetry

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