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Spectroscopic ellipsometry characterization of ZnO:Sn thin films with various Sn composition deposited by remote-plasma reactive sputtering

Autoři: Janíček Petr | Niang Kham M. | Mistrík Jan | Pálka Karel | Flewitt Andrew J.

Rok: 2016

Druh publikace: ostatní - přednáška nebo poster

Strana od-do: nestránkováno

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
eng	Spectroscopic ellipsometry characterization of ZnO:Sn thin films with various Sn composition deposited by remote-plasma reactive sputtering	Transparent and conductive oxide films, which are derived from wide band-gap semiconductors with low specific resistance and high transparency in the visible wavelength range have found wide applications in recent years. One of the most promising candidate substitutes for indium tin oxide (ITO) films are ZnO and doped ZnO. Moreover, in recent years, semiconducting metal oxides have been recognised as leading candidates for channel materials in thin film transistors for large area display applications due to their higher carrier mobility over the incumbent material, hydrogenated amorphous silicon. In particular, indium-gallium-zinc oxide (IGZO) has been extensively investigated. However, this material system consists of resource-scarce and expensive indium and gallium. Therefore, in this work, we focus on an alternative, indium-free zinc-tin oxides, as TFTs incorporating this material has been shown to have high mobility. ZnO layers doped with Sn were deposited by remote-plasma reactive sputtering from zinc:tin alloy targets with tin compositions of 10, 33 and 50 at.%. For comparison, undoped ZnO films were also deposited from a 100% zinc target. Oxygen was used as the reactive gas and the films presented in this work were deposited with an optimized oxygen flow rate. Samples were annealed at 500°C in different ambient (in air and in vacuum). The aim of this study is to connect results determined by spectroscopic ellipsometry: a) optical constants in form of the real and imaginary part of dielectric function over a wide spectral range (from 190 nm to 30 000 nm) and b) morphological properties (layer thickness and surface roughness) together with results determined by other methods (AFM, resistivity measurements). Influence of annealing on the optical constants and electrical and morphological properties of a series of ZnO layers with different Sn composition will be discussed considering possible utilization of these layers as thin film transistors.	spectroscopic ellipsometry; remote-plasma reactive sputtering; ZnO:Sn; optical properties

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