Univerzita Pardubice Fakulta chemicko- technologická

Univerzita Pardubice

Zaměstnanci
|
Studenti
English

Publikace detail

STUDY ON THERMOELECTRIC PROPERTIES OF POLYCRYSTALLINE SnSe DOPED WITH As

Autoři: Šraitrová Kateřina | Drašar Čestmír | Kucek Vladimír | Ruleová Pavlína | Plecháček Tomáš

Rok: 2017

Druh publikace: ostatní - přednáška nebo poster

Strana od-do: nestránkováno

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
eng	STUDY ON THERMOELECTRIC PROPERTIES OF POLYCRYSTALLINE SnSe DOPED WITH As	Thermoelectric (TE) materials are substances that show strong thermoelectric effects. These effects describe the link between temperature difference and difference of electric potential. Thus, these materials allow mutual transformation between thermal energy and electric energy. This fact can be utilized in waste heat power generation or green cooling technologies. Efficiency of a thermoelectric device is a function of the dimensionless figure of merit ZT = α2σT/κ, where α, σ, T and κ are Seebeck coefficient, electrical conductivity, absolute temperature and thermal conductivity, respectively. Recently, high TE performance (ZT = 2,6 at 923 K) has been reported in single crystal SnSe [1]. Primary aim of this work was to investigate the influence of As doping on thermoelectric properties of SnSe in terms of enhancement of ZT. Polycrystalline SnSe1-xAsx samples, where x = 0; 0,0025; 0,005; 0,0075; 0,01; 0,015; 0,02 and 0,04 were prepared. The samples were characterized by X-ray diffraction and electrical conductivity, thermal conductivity, Hall coefficient and Seebeck coefficient. These parameters were measured over a temperature range of 300-725 K. Figure of merit ZT was calculated from obtained data. We observed increase of ZT (450-550 K) due to increase of electrical conductivity and decrease of thermal conductivity in this temperature range. For the sample SnSe0,995As0,005; ZT is found to be 0,1 at 525 K, higher than that of an undoped SnSe (0,05).	Thermoelectric materials, figure of merit, SnSe