Univerzita Pardubice Fakulta chemicko- technologická

Univerzita Pardubice

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Publikace detail

Investigation of stability of doped SnS

Autoři: Čermák Patrik | Plecháček Tomáš | Beneš Ludvík | Drašar Čestmír

Rok: 2018

Druh publikace: ostatní - přednáška nebo poster

Strana od-do: nestránkováno

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
eng	Investigation of stability of doped SnS	Recently, high thermoelectric performance has been reported in single crystalline SnSe [1]. SnS is an eco-friendly analog of SnSe [2]. However, a stable and effective doping of this compound is still questionable [3]. According to our observation, the main obstacles here are very low solubility of dopants and destabilization of SnS structure due to foreign species. Regarding a reasonable 60 % doping efficiency of Tl in SnSe [4], we started with Tl doping of SnS into cation sublattice. Hot-pressed polycrystalline samples were prepared along with single-crystalline samples by various growing technics. Further, we investigated a range of various substitutions in both cation and anion sublattice. Samples were examined for impurity phases by X-ray diffraction. X-ray fluorescence and Energy-dispersive X-ray for chemical analysis. Transport measurements of Seebeck and Hall coefficient, electrical and thermal conductivity were carried out in temperature range 300-700 K. The experiments suggest very low solubility of doping, e.g. less than 0.1 % for Tl. Higher concentration of dopants induces decomposition towards Sn2S3 phase.