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Publikace detail

Solution processed Ge20Sb5S75 thin films – the effect of solution concentration and multiple layers stacking
Rok: 2018
Druh publikace: ostatní - přednáška nebo poster
Strana od-do: nestránkováno
Tituly:
Jazyk Název Abstrakt Klíčová slova
eng Solution processed Ge20Sb5S75 thin films – the effect of solution concentration and multiple layers stacking Chalcogenide glasses (ChGs) are semiconducting materials with high refractive index and wide IR transmission window. They have found many applications in specialized IR optics, optoelectronics and photonics. Based on ChGs application form, they can be used as bulk material, fibers or as a thin film deposited on appropriate substrate. The thin films can be deposited by physical vapor deposition techniques or by solution based deposition techniques which exploit solubility of ChGs in volatile aliphatic amines. The advantage of solution based deposition techniques lies in low cost instrumentation and simplicity of thin films deposition. The main limiting factors of as-prepared solution processed thin films are content of organic residuals and limited maximum thickness. The content of organic residuals can be significantly reduced by post-deposition thermal treatment. The thickness of as-prepared thin films is usually controlled by deposition temperature, concentration of ChG solution and rotation speed (in case of spin-coating technique). However, the solubility of ChGs in aliphatic amines is limited and the higher thickness of as-prepared thin films dampens the ability of solvent removal and subsequently leads to formation of material with gradient of organic residuals and thus with gradient of optical properties as well. In this work, we present the study non-toxic Ge20Sb5S75 thin films deposited by spin-coating technique. The set of thin films was prepared from solutions of different concentrations and their optical properties, surface roughness and content of organic residuals were studied. It was recently confirmed [1], that thermally stabilized spin-coated Ge20Sb5S75 thin films have high chemical resistance to aliphatic amines and thus are appropriate to prepare thicker thin films by multiple deposition technique. Prepared multilayer material was analyzed and its properties compared to single layer spin-coated thin films of the same composition. chalcogenide glasses; spin-coating; optical ellipsometry; stacking; multilayers