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Publikace detail

Alkylsilyl- and alkylstanylselenides: A comparative study
Rok: 2019
Druh publikace: ostatní - přednáška nebo poster
Strana od-do: nestránkováno
Tituly:
Jazyk Název Abstrakt Klíčová slova
eng Alkylsilyl- and alkylstanylselenides: A comparative study Elemental selenium or various metal selenides possess many interesting properties exploitable in various fields such as semiconductor electronics, photovoltaics or catalysis. Atomic layer deposition (ALD) as versatile fabrication tool allows deposition of such precursors in very thin layers on different substrates. The resulting sandwich materials generally show pronounced and even more interesting properties. However, only few suitable precursors are available for selenium to date. These include elemental selenium, very toxic H2Se or recently introduced and the most promising bis(trialkylsilyl)selenides. The present work expand bis(trialkylsilyl)selenides with bis(trialkylstanyl)selenide analogues and similar compounds, that could potentially avoid negative properties of silicon based precursors such as moisture instability and unpleasant smell. The prepared precursors were characterized with MS, NMR and most importantly also by DSC and TG analyses. Their synthesis and thermal stability and volatility, as the most important properties for use in ALD, will be presented and discussed. Alkylsilylselenides; Alkylstanylselenides; Atomic layer deposition