Publikace detail

Crystal structure and transport properties of CuPdBiS3

Autoři: Laufek F. | Vymazalová A. | Navrátil Jiří | Chareev D. A. | Plasil J.

Rok: 2019

Druh publikace: článek v odborném periodiku

Název zdroje: Journal of Alloys and Compounds

Název nakladatele: Elsevier Science SA

Místo vydání: Lausanne

Strana od-do: 983-987

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
cze	Crystal structure and transport properties of CuPdBiS3	Paper deals with crystal structure and transport properties of CuPdBiS3.
eng	Crystal structure and transport properties of CuPdBiS3	The CuPdBiS3 compound was synthetized from individual elements by solid-state chemical reactions and structurally characterized by single-crystal X-ray diffraction. It crystalizes in the (Bi, Sb)CuNiS3 structure-type with the P2(1)2(1)2(1) space group, unit-cell parameters a = 4.8847(8), b = 7.5885(11), c = 12.8646(10), V = 476.86(11) and Z = 4. The structure of CuPdBiS3 compound forms a three-dimensional framework composed of corner-sharing [CuS4] deformed tetrahedra and [PdS4] squares. The Bi atoms form [BiS4] pyramids and fill the channels running along the a-axis. There are no short Pd-Pd, Cu-Pd or Cu-Cu interactions (< 3.4 angstrom). Arrhenius behaviour of the electrical conductivity was observed. Considering high free carrier concertation and very low Hall mobility, charge transport is very likely realized via thermally-activated hopping processes. Despite high values of the Seebeck coefficient and rather low thermal conductivity values, the thermoelectric figure-of-merit reaches its maximal value ZT = 0.023 at 675 K only. (C) 2019 Elsevier B.V. All rights reserved.	CuPdBiS3; Crystal structure; X-ray diffraction; Transport properties

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