Univerzita Pardubice Fakulta chemicko- technologická

Univerzita Pardubice

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Publikace detail

Organic volatile selenium compounds in Atomic Layer Deposition

Autoři: Charvot Jaroslav | Barr Maissa | Zazpe Raul | Cao Yuanyuan | Koch Vanessa | Pokorný Daniel | Macák Jan | Bachmann Julien | Bureš Filip

Rok: 2021

Druh publikace: ostatní - přednáška nebo poster

Strana od-do: nestránkováno

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
eng	Organic volatile selenium compounds in Atomic Layer Deposition	Atomic Layer Deposition (ALD) is technique allowing deposition of thin films in (sub)nanometre scale with great precision in thickness and composition control. Thanks to its step-by-step mechanism, where precursors are introduced separately only one atomic layer is deposited during the cycle and number of cycles then corresponds to final thickness. Usually complicated conventional gas (gALD) reactor with high requirements for precursors volatility and thermal stability was recently simplified with introduction of solution-ALD (sALD), where the reaction is carried out in liquid phase and laboratory conditions. Metal selenides are interesting materials with already discovered or promising properties in many fields as photovoltaics, catalysis or thermoelectric devices. Their characteristics may be even more pronounced with scaling down the device or using nano-heterostructures. For the preparation of such a device, ALD is the number one method, however up to date only few selenium ALD precursors were introduced. The first depositions using inconvenient alkylselenides or very toxic and unstable H2Se were later expanded with bis(trialkylsilyl)selenides, which are the most established selenium precursors up to date. This work aims to investigate preparation of organic selenides, as novel ALD precursors. Dozen of linear or cyclic-silyl selenides, silyl-selenols and stanyl-selenides were examined and their syntheses were optimized using simple starting materials. Further it focuses on fundamental thermal properties that play the key role in successful thin film deposition using gALD. Selected precursors were tested for deposition of MoSe2 (gALD) and Sb2Se3 (sALD).	ALD; selenides, selenols; thin film deposition