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Investigation of tris(trialkylsilyl)phosphides in Atomic Layer Deposition

Autoři: Charvot Jaroslav | Barr Maissa | Bachmann Julien | Bureš Filip

Rok: 2022

Druh publikace: ostatní - přednáška nebo poster

Strana od-do: nestránkováno

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Jazyk	Název	Abstrakt	Klíčová slova
eng	Investigation of tris(trialkylsilyl)phosphides in Atomic Layer Deposition	Phosphides are interesting materials among wide variety of scientific fields. InP and GaP are the most profound semiconductors with application in photovoltaics or electronics. Several ALD depositions of metal phosphides were already presented. Apart from one reported reaction of P(NMe2)3 with GaMe3 affording GaP, PH3 or its alkylated analogue tBuPH2 are usually used as a source of P-III ion. Nevertheless, except high toxicity of PH3, depositions using this precursor are often accompanied with lower reactivity supplemented by plasma activation or laser irradiation. PH3 may also decompose during the deposition causing high content of phosphorus resulting in non-linear growth. This problem is solved by extra step introducing hydrogen plasma making the process even more complicated. Trialkylsilyl ligand were utilized in ALD of As, Sb Se and Te several times. Its electropositive nature generates negative charge on the deposited atom ensuring high reactivity, while keeping good volatility and thermal stability. For example, tris(trimethylsilyl)phosphide is a favorite precursor for metal phosphide quantum dots. It is fairly volatile and can be distilled even at laboratory pressure. Interestingly, no ALD deposition using this class of precursor has been reported for so far. Therefore, this work aims to investigate tris(trialkylsilyl)phosphides as a potential ALD precursors. Preparation of these molecules will be discussed along with structure/thermal properties relationships and selected phosphides will be tested for thin film deposition in ALD.	phosphide; ALD; trialkylsilyl;

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