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Publikace detail

Co-sputtered Ga–Sb–Te thin films: phase change material characterization
Rok: 2022
Druh publikace: ostatní - přednáška nebo poster
Strana od-do: nestránkováno
Tituly:
Jazyk Název Abstrakt Klíčová slova
eng Co-sputtered Ga–Sb–Te thin films: phase change material characterization The investigation and application of chalcogenides in the field of phase change materials (PCM) for data storage have been focused mainly on Ge-Sb-Te and Ag-In-Sb-Te systems. The present work studies Ga-Sb-Te system as a potential medium for PCM. The radio-frequency magnetron co-sputtered thin films from two pseudo-binary tie-lines, i.e., GaSb–GaTe (keeping content of Ga at 50 of at. % and changing the ratio between Sb and Te) and GaSb–Te (increasing the content of Te) are studied and characterized.