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Ge-Sb-Te thin films fabricated by co-sputtering and pulsed laser deposition
Rok: 2024
Druh publikace: ostatní - článek ve sborníku
Název zdroje: 11. mezinárodní chemicko-technologická konference : book of abstracts
Název nakladatele: AMCA, spol. s r.o.
Místo vydání: Praha
Strana od-do: nestránkováno
Tituly:
Jazyk Název Abstrakt Klíčová slova
eng Ge-Sb-Te thin films fabricated by co-sputtering and pulsed laser deposition During the last decades, the thin films from GeSbTe (hereinafter GST) or AgInSbTe system have been deeply investigated. The main reason for high scientific interest in this class of materials is the fact that these materials are able to transform quickly and reversibly from amorphous to crystalline phase (disorder-order transition) and vice versa; this phenomenon was first reported by Ovshinsky [1]. Phase transition can be reversibly switched by varying the electric field or temperature when heating is done using a laser pulse in optical recording applications. The unique characteristics of phase change GST materials are based on huge optical reflectivity (up to 30%) or electrical conductivity (several orders of magnitude) changes proceeding upon phase transition. The aim of this work is to combine co-sputtering and pulsed laser depozition as an advanced techniques for thin films growth with the fabrication of an important class of inorganic materials being represented by GST thin films. The characterization of deposited thin films in as-deposited state (amorphous phase) as well as in crystalline state (induced by thermal annealing) was performed exploiting atomic force microscopy, scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction, electrical resistivity, and variable angle spectroscopic ellipsometry data. The results GST, thin films

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