Univerzita Pardubice Fakulta chemicko- technologická

Univerzita Pardubice

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Publikace detail

Synthesis traps of polycrystalline Bi2O2Se

Autoři: Zich Jan | Navrátil Jiří | Sojka Antonín | Plecháček Tomáš | Drašar Čestmír

Rok: 2024

Druh publikace: ostatní - přednáška nebo poster

Strana od-do: nestránkováno

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
eng	Synthesis traps of polycrystalline Bi2O2Se	Bismuth oxyselenide (Bi2O2Se) is being investigated as a promising thermoelectric (TE) material, IR photodetector and 2D FET substrate. Its main advantage as a TE material is the combination of good transport properties, absence of toxic elements and reasonable price. As the pure material has low electrical conductivity, researchers focus on doping [1]. In this context, it is crucial to distinguish the effect of doping from a simple variation of the base material. It is noteworthy that even for the same synthesis method, the reported transport properties of bulk polycrystalline samples are very different. [2,3,4]. To identify multiple factors contributing to the variation in transport properties, we prepared a series of samples from different synthesis compounds and with different synthesis routes. In order to identify foreign phases in the prepared samples, we carried out an analysis using powder X-ray diffraction (PXRD), scanning electron microscopy/energy dispersive X-ray spectroscopy (SEM/EDS), Raman spectroscopy and ATR IR spectroscopy. In this work we present how impurities can affect the transport properties of undoped material and provide a reproducible low-temperature solid-state synthesis process for pure Bi2O2Se