Univerzita PardubiceFakulta chemicko- technologická

Univerzita Pardubice

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Publikace detail

Preparation and characterisation of Si3N4 thin films

Autoři: Bečvář Kamil | Němec Petr | Bouška Marek | Janíček Petr | Gutwirth Jan

Rok: 2025

Druh publikace: ostatní - přednáška nebo poster

Strana od-do: nestránkováno

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
eng	Preparation and characterisation of Si3N4 thin films	Phase change materials represent a group of chalcogenide alloys with exceptional properties. By adding heat, it is possible to switch rapidly and reversibly between amorphous and crystalline states. The change occurs within nanoseconds. These states have a high optical and electrical contrast because the phase change results in a sharp change in electrical resistivity and reflectivity. The differences between these states are exploited in non-volatile storage media where they form a recording layer or various photonic applications. The properties can be change by changing the composition of the alloy itself or by doping with additional elements. These materials are most often applied in the form of thin films with thicknesses ranging from nanometer to micrometer units. Phase change materials films still face some challenges and have some shortcomings. These include phase stability, oxidation, reaction with moisture or mechanical damage. In addition to doping the elements, these undesirable effects can be combated with a capping layer. Silicon-based compounds such as SiNx or SiO2 seem to be an interesting choice. Si3N4 has a high dielectric constant, good thermal shock resistance, strength and high chemical stability. In the spectral range of 300–1200 nm, it achieves high transmittance. Si3N4 layers were prepared by magnetron sputtering and subsequently characterized by spectroscopic ellipsometry, infrared spectroscopy, scanning electron microscopy and atomic force microscopy.