Publikace detail

Figure of Merit of quaternary (Sb0,75Bi0,25)2-xInxTe3 single crystals

Rok: 2008

Druh publikace: článek v odborném periodiku

Název zdroje: Journal of Applied Physics

Název nakladatele: American Institute of Physics

Místo vydání: Melville

Strana od-do: 023701/1-023701/4

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
cze	Figure of Merit kvaternárních monokrystalů (Sb0,75Bi0,25)2-xInxTe3	Monokrystaly (Sb0,75Bi0,25)2-xInxTe3 byly připraveny Bridgmanovou metodou. Byly měřeny transportní a termoelektrické vlastnosti. Byl zjištěn významný vzrůst parametru Z.	chalkogenidy; transportní koeficienty; termoelektrické vlastnosti
eng	Figure of Merit of quaternary (Sb0,75Bi0,25)2-xInxTe3 single crystals	Single crystals of a quaternary system based on (Sb0,75Bi0,25)2Te3 doped with In were prepared using the Bridgman technique. Samples with varying content of In were characterized by the measurements of electrical conductivity c, Hall coefficient RH(B\|\|c), Seebeck coefficient S(Tc) and thermal conductivity  (Tc). The measurements indicate that by incorporating In in (Sb0,75Bi0,25)2Te3 one lowers the concentration of free holes. This effect is explained in terms of a point defect model in the crystal lattice. We also discuss the temperature dependence of the thermoelectric figure of merit Z=S2/ of the samples. It is observed that low concentrations of In atoms in the (Sb0,75Bi0,25)2Te3 crystal lattice result in a substantial increase in the parameter Z in the temperature region 100K - 300K.	Chalcogenides of tetradymite structure; Transport coefficients; Thermoelectric properties

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