Univerzita Pardubice Fakulta chemicko- technologická

Univerzita Pardubice

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Publikace detail

Molybdenum Disulfides and Diselenides by Atomic Layer Deposition

Autoři: Zazpe Raul | Přikryl Jan | Krbal Miloš | Charvot Jaroslav | Dvořák Filip | Bureš Filip | Macák Jan

Rok: 2019

Druh publikace: ostatní - přednáška nebo poster

Strana od-do: nestránkováno

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
eng	Molybdenum Disulfides and Diselenides by Atomic Layer Deposition	The discovery and success of graphene paved the way for developing two-dimensional materials with outstanding properties [1]. In particular, monolayers of two-dimensional transition metal dichalcogenides (2D TMDCs) possess a direct band gap [2] that is crucial for optoelectronic applications. Additionally, the direct band gap can be easily tuned by either chemical composition or external stimuli. In parallel to monolayer TMDCs structures, a high surface area layer of TMDCs flakes shows promising properties for hydrogen evolution [3], photodegradation of organic dyes [4] or as electrodes in Li ion batteries [5]. To date, various top-down (e.g. exfoliation) and bottom-up techniques, such as chemical vapor deposition (CVD) and atomic layer deposition (ALD) have been reported for the preparation of 2D-TMDCs [1]. However, ALD is the only technique enabling sub-nanometer thickness control, which is revealed as a crucial factor in the properties of 2D TMCDs materials. In the last years, it has been reported the possibility to employ ALD as a technique to grow MoS2, which has been extensively studied for many different applications. In these works (CH3)2S2 [6] or H2S [7, 8] were used as the S precursor and Mo(CO)6 [6], MoCl5 [7] or Mo(thd)3 [8] as the Mo precursors. Further, important efforts have also been devoted to attain the ALD fabrication of MoSe2, since it possesses higher electrical conductivity than MoS2 [9, 10]. Recently, we have shown that ALD deposition of MoSe2 [11] or Mo-O-Se [12] is feasible using (CH3)2S2 as the Se precursor and the MoCl5 or Mo(CO)6, respectively, as the Mo precursors. The presentation will focus on the synthesis of MoS2 and MoSe2 by ALD, their characterization and applications in various fields. Experimental details and some recent photocatalytic, battery and hydrogen evolution results will be presented and discussed. [1] A. V. Kolobov, J. Tominaga, Two-Dimensional Transition-Metal, Dichalcogenides. Springer Series in Materials Science, Spr